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CEP51A3 |
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| Part Number | CEP51A3 |
| Manufacturer | CET |
| Description | CEP51A3/CEB51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). Hig... |
| Features |
30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
48 160 70 0.48 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C ... |
| Document |
 CEP51A3 Data Sheet
PDF 105.96KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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