CEP13N07 |
Part Number | CEP13N07 |
Manufacturer | CET |
Description | CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). H... |
Features |
70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD EAS IAS TJ,Tstg 70
Units V V A A W W/ C mJ A C
±20
13 52 45 0.3 85 11 -55 to 175
Maximum Power Dissipation @ TC = 25 C - D... |
Document |
CEP13N07 Data Sheet
PDF 102.93KB |
Similar Datasheet