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Princeton Technology Corp |
Enhanced Digital Echo IC enhanced functions such as continuous delay time with external VR (Variable Resistor), 256 K DRAM support for longer delay time (Extended Delay Mode, up to 800 ms at 4 MHz Clock) as compared to M50195P. Moreover, the distortion and |
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CET |
N-Channel MOSFET 30V, 25A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 39mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-P |
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CET |
P-Channel MOSFET -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SER |
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CET |
N-Channel MOSFET 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES T |
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CET |
N-Channel MOSFET 60V, 76A , RDS(ON) = 6.2mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES |
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CET |
N-Channel MOSFET 60V, 28A, RDS(ON) = 25mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D- |
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CET |
N-Channel MOSFET 800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIE |
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CET |
N-Channel MOSFET 720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS |
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CET |
P-Channel MOSFET -200V, -10.5A, RDS(ON) = 0.36Ω @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED S |
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CET |
N-Channel MOSFET 600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES |
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CET |
N-Channel MOSFET 100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-25 |
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Princeton Advanced Components |
Delay Modules / TTL / Surface Mounted |
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CET |
N-Channel MOSFET 700V, 1.6A, RDS(ON) = 6.6Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO |
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CET |
N-Channel MOSFET 600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D 6 G D G S G D S CEU SERIES TO-252AA(D-PAK) CED SERIES TO-251(l-PAK) S ABSOLUTE M |
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CET |
N-Channel MOSFET 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012/CEU1012 D D G S CEU SERIES TO-252(D-PAK) G D |
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CET |
N-Channel MOSFET 70V, 11A, RDS(ON) = 127mΩ @VGS = 10V. RDS(ON) = 153mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-P |
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CET |
P-Channel MOSFET -30V, -9A, RDS(ON) = 200mΩ @VGS = -10V. RDS(ON) = 320mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D PRELIMINARY D G S CEU |
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CET |
N-Channel MOSFET 20V, 20A, RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D- |
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CET |
N-Channel MOSFET 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED3070/CEU3070 D D G S |
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CET |
N-Channel MOSFET 60V, 15A, RDS(ON) = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-2 |
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Desde 2024. D4U Semiconductor.
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