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CED20P10 |
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| Part Number | CED20P10 |
| Manufacturer | CET |
| Description | CED20P10/CEU20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High powe... |
| Features |
-100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
-100
±20
-16 -64 75
0.5
Single Pulsed Avalanche Energy e
EAS 128
Singl... |
| Document |
 CED20P10 Data Sheet
PDF 371.12KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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