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CED1012 |
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| Part Number | CED1012 |
| Manufacturer | CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Le... |
| Features |
120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED1012/CEU1012
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 120
Units V V A A W W/ C C
±20
10 40 50 0.3 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Ope... |
| Document |
 CED1012 Data Sheet
PDF 378.07KB |
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