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NPN SILICON EPITAXIAL TRANSISTOR • Low Voltage Use. • High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) • Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz) • High |S21e|2: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f |
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NPN SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial sili |
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NPN SILICON RF TRANSISTOR • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: ηC = 60% • UHS0-HV technology (fT = 25 GHz) adopted • High reliability through use of g |
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(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTI |
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NPN SILICON TRANSISTOR • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz OUTLINE DIMENSIONS (Un |
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NPN SILICON TRANSISTOR • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE |
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NPN SILICON TRANSISTOR • • • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NE685M33-A NE685M33-T3-A |
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SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES • ALSO AVAILABLE IN CHIP FORM 18 (SOT 343 |
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NPN EPITAXIAL SILICON RF TRANSISTOR • High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain • 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplyi |
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NPN SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial sili |
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NPN SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial sili |
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NPN SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial sili |
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NPN SILICON HIGH FREQUENCY TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE DESCRIPTION The NE680 series of NPN epitaxial sili |
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SILICON TRANSISTOR • NF • Ga 1.2 dB TYP. 13 dB TYP. @f = 1.0 GHz @f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 +0.1 −0.15 0.4 2 13 +0.1 −0.05 2.9±0.2O 0.95 0.95 0.4 +0.1 −0.06 0.16 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base V |
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MEDIUM POWER GaAs HJ-FET • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS • HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc • HIGH LINEAR GAIN: 10 dB TYP at |
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SILICON TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz • LOW NOISE: 1.5 dB AT 2.0 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURF |
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SILICON TRANSISTOR • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz • LOW NOISE: 1.5 dB AT 2.0 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURF |
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(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTI |
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NPN SILICON TRANSISTOR • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE |
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NPN SILICON TRANSISTOR • • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NE687M33-A NE687M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed tapi |
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Desde 2024. D4U Semiconductor.
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