Busque con el número de pieza junto con el fabricante o la descripción
NE6510179A |
Click to view a larger image
| Part Number | NE6510179A |
| Manufacturer | CEL |
| Description | NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of de... |
| Features |
• LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS • HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc • HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5°C/W DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high... |
| Document |
 NE6510179A Data Sheet
PDF 683.57KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE6510179 |
NEC |
1 W L-BAND POWER GaAs HJ-FET |
|
| 2 | NE6510179A |
NEC |
1 W L-BAND POWER GaAs HJ-FET |
|
| 3 | NE6510379A |
NEC |
3 W L-BAND POWER GaAs HJ-FET |
|
| 4 | NE651R479A |
NEC |
0.4 W L-BAND POWER GaAs HJ-FET |
|
| 5 | NE650 |
Philips |
Dolby B-Type Noise Reduction Circuit |
|
| 6 | NE6500379 |
NEC |
3W L / S-BAND POWER GaAs MESFET |
|
Desde 2024. D4U Semiconductor.
|