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NE67400 |
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| Part Number | NE67400 |
| Manufacturer | CEL |
| Description | NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active... |
| Features |
• LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise Figure, NF (dB) NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 3 V ID = 10 mA 20 • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm 3.0 GA 16 2.0 12 DESCRIPTION NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This device features a low noise figure with high associated gain, employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with SiD2 and Si3N4 for scratch protection and surface stability. This device is suitable for both amplifier and oscil... |
| Document |
 NE67400 Data Sheet
PDF 137.60KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE67483B |
CEL |
(NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET |
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| 2 | NE67300 |
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| 3 | NE67383 |
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| 4 | NE677M04 |
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NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| 5 | NE678M04 |
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| 6 | NE678M04 |
CEL |
NPN SILICON RF TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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