| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET V DS R @ DS(on) |
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Advanced Semiconductor |
NPN RF POWER TRANSISTOR INCLUDE: • Input/Output Matching • Gold Metallization • Hermetically Sealed Package • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 1.0 A 40 V 20 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 9.0 C/W O O O O CHARACTERISTICS SYMBOL |
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Advanced Semiconductor |
NPN RF POWER TRANSISTOR INCLUDE: • Input/Output Matching • Gold Metallization • Hermetically Sealed Package • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 1.0 A 40 V 31 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 5.5 C/W O O O O 1 = COLLECTOR 2 & 4 = |
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Advanced Semiconductor |
NPN RF POWER TRANSISTOR INCLUDE: • Input/Output Matching • Gold Metallization • Hermetically Sealed Package • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 1.0 A 45 V 32 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 5.5 C/W O O O O CHARACTERISTICS SYMBOL |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; RoHS compliant VSO009N06MSC-G 60V/15A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4 |
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Advanced Semiconductor |
High Power GaAs FET INCLUDE: • 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Gra |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • PG = 6.0 dB min. at 3 W / 3,000 MHz • Difused Ballast Resistor • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2 |
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Advanced Semiconductor |
NPN RF POWER TRANSISTOR INCLUDE: • Input/Output Matching • Gold Metallization • Hermetically Sealed Package • Emitter Ballasting PACKAGE STYLE 400 2L FLG (E) MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 0.6 A 50 V 20 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 9.0 C/W O |
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Advanced Semiconductor |
NPN RF POWER TRANSISTOR INCLUDE: • Input/Output Matching • Gold Metallization • Emitter Ballasting PACKAGE STYLE 400 2L FLG (E) MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 0.9 A 45 V 20 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 9.0 C/W O O O O 1 = COLLECTOR 2 & 4 = |
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Advanced Semiconductor |
NPN RF POWER TRANSISTOR INCLUDE: • Input/Output Matching • Gold Metallization • Hermetically Sealed Package • Emitter Ballasting MAXIMUM RATINGS IC VCBO PDISS TJ TSTG θJC O O 1.0 A 40 V 58 W @ TC = 25 C -55 C to+200 C -55 C to+200 C 3.0 C/W O O O O CHARACTERISTICS SYMBOL |
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Advanced Semiconductor |
HIGH POWER GaAs FET INCLUDE: • FET PACKAGE TYPE 30 High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz • www.DataSheet4U.com • APPLICATIONS: • S to Ku Band Power Amplifie |
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Advanced Semiconductor |
NPN RF TRANSISTOR • • Hermetically Sealed Package Gold Metallization MAXIMUM RATINGS IC VCC VEB www.DataSheet4U.com 1.2 A 26 V 3.5 V 21.4 W @ TC = 50 C -65 C to +200 C -65 C to +200 C 7.0 C/W O O O O O O PDISS TJ TSTG θJC 1 = Collector 2 = Emitter 3 = Base TRANS |
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Advanced Semiconductor |
NPN RF TRANSISTOR • • Hermetically Sealed Package Gold Metallization MAXIMUM RATINGS IC VCC VEB www.DataSheet4U.com 600 mA 26 V 3.5 V 11.5 W @ TC = 50 C -65 C to +200 C -65 C to +200 C 13 C/W O O O O O O PDISS TJ TSTG θJC 1 = Collector 2 = Emitter 3 = Base TRANS |
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Advanced Semiconductor |
NPN RF TRANSISTOR • • • Emitter Ballasted Gold Metallization Hermetically sealed Package MAXIMUM RATINGS IC VCEO PDISS TJ www.DataSheet4U.com 300 mA 20 V 5.0 W @ TC = 25 C -65 C to +200 C -65 C to +200 C 35 C/W O O O O O O TSTG θJC 1 = Collector 2 = Emitter 3 = B |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Gold Metalization • Site Emitter Ballasting L G H J F I K M NP MAXIMUM RATINGS IC VCC www.DataSheet4U.com DIM A B C D E F MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2 |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR INCLUDE: • Gold Metalization • Emitter Ballasting G L H J F I K M NP MAXIMUM RATINGS IC VCC DISS www.DataSheet4U.com DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .11 |
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Advanced Semiconductor |
NPN SILICON RF MICROWAVE TRANSISTOR INCLUDE: • Omnigold™ Metalization System • POUT 4.0 W Min. • GP = 10 dB MAXIMUM RATINGS IC www.DataSheet4U.com 1.0 A 37 V 7.5 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 35 °C/W 1 = COLLECTOR 2 = BASE 3 = EMITTER VCE PDISS TJ TSTG θJC CHA |
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Advanced Semiconductor |
NPN RF TRANSISTOR |
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Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR • Internal Input/Output Matching Networks • PG = 6.2 dB at 250 W/1150 MHz • Omnigold™ Metalization System L P M D IM A B M IN IM U M in c h e s / m m N M A X IM U M in c h e s / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 |
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Desde 2024. D4U Semiconductor.
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