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MSC8001 |
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| Part Number | MSC8001 |
| Manufacturer | Advanced Semiconductor |
| Description | MSC8001 HIGH POWER GaAs FET FEATURES INCLUDE: • 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates... |
| Features |
INCLUDE:
• 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package Suitable for Hi-Rel Applications Custom Electrical Test and Screening Available for Source Control Drawings • • FET PACKAGE TYPE 30 • • • TRANS1.SYM RF ELECTRICAL SPECIFICATIONS SYMBOL MAG PMAG FREQUENCY MAX AVAILABLE GAIN TA = 25 C O TEST CONDITIONS = 8.0 GHz MINIMUM TYPICAL MAXIMUM 8.5 24 UNIT... |
| Document |
 MSC8001 Data Sheet
PDF 17.13KB |
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