MSC80915 |
Part Number | MSC80915 |
Manufacturer | Advanced Semiconductor |
Description | The ASI MSC80915 is Designed for Class A, Common Emitter Applications to 2.3 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting... |
Features |
INCLUDE:
• Gold Metalization • Emitter Ballasting G L H J F I K M NP MAXIMUM RATINGS IC VCC DISS www.DataSheet4U.com DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 300 mA 20 V 5.0 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 35 C/W O O O O O O .255 / 6.48 .132 / 3.35 E F .117 / 2.97 P G H I J K .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187... |
Document |
MSC80915 Data Sheet
PDF 43.03KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MSC80914 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
2 | MSC80917 |
Advanced Semiconductor |
NPN SILICON RF MICROWAVE TRANSISTOR | |
3 | MSC8001 |
Advanced Semiconductor |
High Power GaAs FET | |
4 | MSC8004 |
Advanced Semiconductor |
HIGH POWER GaAs FET | |
5 | MSC80064 |
Advanced Power Technology |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS | |
6 | MSC80183 |
Advanced Semiconductor |
NPN RF TRANSISTOR |