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| Part Number | TJ11A10M3 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TJ11A10M3 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ11A10M3，ITJ11A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and . |
| Features |
·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 . |
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Desde 2024. D4U Semiconductor.
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