TJ11A10M3 INCHANGE N-Channel MOSFET Datasheet. existencias, precio

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TJ11A10M3

INCHANGE
TJ11A10M3
TJ11A10M3 TJ11A10M3
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Part Number TJ11A10M3
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ11A10M3,ITJ11A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 ...
Features
·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V)
·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -11 IDM Drain Current-Single Pulsed -22 PD Total Dissipation @TC=25℃ 24 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V...

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