TJ11A10M3 |
Part Number | TJ11A10M3 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor TJ11A10M3,ITJ11A10M3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 ... |
Features |
·Low drain-source on-resistance: RDS(on) ≤130mΩ.(VGS = -10 V) ·Enhancement mode: Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -11 IDM Drain Current-Single Pulsed -22 PD Total Dissipation @TC=25℃ 24 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V... |
Document |
TJ11A10M3 Data Sheet
PDF 238.32KB |
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