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TJ11A10M3 |
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| Part Number | TJ11A10M3 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TJ11A10M3 MOSFETs Silicon P-Channel MOS (U-MOS) TJ11A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to -4.0 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain 3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol... |
| Document |
 TJ11A10M3 Data Sheet
PDF 260.34KB |
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