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TIP36C |
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| Part Number | TIP36C |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP35C TIP36C Marking TIP35C TIP36C Package TO-247 September 2008 Rev 5 Packaging. |
| Features |
■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio amplifier Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. . 3 2 1 TO-247 Figure 1. Internal schematic diagrams Table 1. Device summary Order code TIP35C TIP36C Marking TIP35C TIP36C Package TO-247 September 2008 Rev 5 Packaging Tube 1/9 www.st.com 9 Electrical ratings 1 Electrical ratings Table 2. Symbol Absolute maxim. |
| Datasheet |
 TIP36C Data Sheet
PDF 172.06KB |
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TIP36C |
| Part Number | TIP36C |
| Manufacturer | Power Innovations Limited |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designed for Complementary Use with the TIP35 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Curren. |
| Features | Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | KEC |
| Title | TRIPLE DIFFUSED PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP35C. Icmax:-25A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C. |
| Features | Recommended for 75W Audio Frequency Amplifier Output Stage. Complementary to TIP35C. Icmax:-25A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature VCBO VCEO VEBO IC IB PC Tj Storage Temperature Range Tstg RATING -100 -100 -5 -25 -5.0 125. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | With TO-3PN package www.datasheet4u.com ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A. |
| Features | to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP36 Collector-emitter sustaining voltage TIP36A IC=-30mA ;IB=0 TIP36B TIP36C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Col. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | Motorola |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Ty. |
| Features |
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MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | Unisonic Technologies |
| Title | HIGH POWER TRANSISTORS |
| Description | The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C. INTERNAL SCHEMATIC DIAGRAM C (2) (1) B E (3) ORDERING INFORMATION Order Number Lead Free Halogen Free TIP36CL-x-T3P-T TIP3CG-x-T3P-T TIP36. |
| Features | TSTG -65 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Case SYMBOL θJC MIN TYP ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified) MAX 1 UNIT C/W PARAMET. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | TIP36A, TIP36B, TIP36C Silicon PNP Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute M. |
| Features | D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP36A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TI. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon High-Power Transistors |
| Description | Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @. |
| Features |
• 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Symbol Rating TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Unit VCEO Collector − Emitter Voltage 60 VCB Collector − Base Voltage 60 VEB Emitter − Bas. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-3P PNP 。Silicon PNP transistor in a TO-3P Plastic Package. / Features ，， TIP35C 。 Low leakage current, high current gain bandwidth product, Complementary to TIP35C. / Applications 。 Amplifier and switching applications. / Equivalent Circuit / Pinning PIN1：Base PIN 2：Collector P. |
| Features | ，， TIP35C 。 Low leakage current, high current gain bandwidth product, Complementary to TIP35C. / Applications 。 Amplifier and switching applications. / Equivalent Circuit / Pinning PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 TIP36C Rev.E Mar.-2016 DATA SHEET / Absolute Maximum Ratings(Ta=25℃) Pa. |
TIP36C |
| Part Number | TIP36C |
| Manufacturer | nELL |
| Title | Complementary Silicon Power Transistor |
| Description | SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation. |
| Features | Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (M. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP36 |
nELL |
Complementary Silicon Power Transistor |
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| 2 | TIP36 |
INCHANGE |
PNP Transistor |
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| 3 | TIP36 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
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| 4 | TIP36 |
Central Semiconductor |
Complementary Silicon Power Transistors |
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| 5 | TIP36 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | TIP36 |
Comset Semiconductors |
Silicon Power Transistors |
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| 7 | TIP36A |
nELL |
Complementary Silicon Power Transistor |
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| 8 | TIP36A |
Motorola |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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| 9 | TIP36A |
ON Semiconductor |
Complementary Silicon High-Power Transistors |
|
| 10 | TIP36A |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
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