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TIP36A |
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| Part Number | TIP36A |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP35A/D Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain — hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product — hfe = 3.0 m. |
| Features |
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MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP35A TIP36A 60 V 60 V TIP35B TIP36B 80 V 80 V 5.0 25 40 TIP35C TIP36C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 5.0 PD 125 1.0 Watts W/_C Operating and Storage Junction Temperature Range Unclamped Inductive Load TJ, Tstg ESB – 65 to + 150 90 TIP35A TIP35B * TIP35C * PNP TIP36A TIP36B * TIP36C * *Motorola Pre. |
| Datasheet |
 TIP36A Data Sheet
PDF 157.85KB |
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TIP36A |
| Part Number | TIP36A |
| Manufacturer | Power Innovations Limited |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designed for Complementary Use with the TIP35 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Curren. |
| Features | Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | With TO-3PN package www.datasheet4u.com ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A. |
| Features | to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP36 Collector-emitter sustaining voltage TIP36A IC=-30mA ;IB=0 TIP36B TIP36C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Col. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | TIP36A, TIP36B, TIP36C Silicon PNP Transistors Power Amp, Switch TO−247 Type Package Features: D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute M. |
| Features | D 25A Collector Current D Low Leakage Current: ICEO = 1mA @ 30V and 60V D Excellent DC Gain: hFE = 40 (Typ) @ IC = 15A D High Current Gain Bandwidth Product: |hfe| = 3 (Min) @ IC = 1A, f = 1MHz Absolute Maximum Ratings: Collector−Base Voltage, VCB TIP36A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V TI. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | nELL |
| Title | Complementary Silicon Power Transistor |
| Description | SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 Φ3.2±0,1 TO-3P(B) FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation. |
| Features | Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter Saturation Voltage: VCEO(sus) = 40Vdc (Min.) - TIP35,TIP36 = 60Vdc (Min.) - TIP35A,TIP36A = 80Vdc (M. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Complement to Type TIP35A ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designe. |
| Features | ered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A ;IB= -1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A; IB= -5A VBE(on)-1 Base-Emitter On Voltage IC= -15A; VCE= -4V V. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon High-Power Transistors |
| Description | Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @. |
| Features |
• 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz • These are Pb−Free Devices* MAXIMUM RATINGS Symbol Rating TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C Unit VCEO Collector − Emitter Voltage 60 VCB Collector − Base Voltage 60 VEB Emitter − Bas. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | Comset Semiconductors |
| Title | Silicon Power Transistors |
| Description | SEMICONDUCTORS PNP TIP36-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings TI. |
| Features | rrent -5 A @ Tc < 25° PC Power Dissipation @ Ta < 25° 125 Watts 3.5 TJ Junction Temperature http://www.DataSheet4U.net/ 150 °C -65 to +150 Ts Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C Value Unit RthJ-MB From junction to mounting base 1 °C/W RthJ-A From junction to ambient in free air 35.7 °C/W 04/10/. |
TIP36A |
| Part Number | TIP36A |
| Manufacturer | Central Semiconductor |
| Title | Complementary Silicon Power Transistors |
| Description | The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-B. |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIP36 |
nELL |
Complementary Silicon Power Transistor |
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| 2 | TIP36 |
INCHANGE |
PNP Transistor |
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| 3 | TIP36 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
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| 4 | TIP36 |
Central Semiconductor |
Complementary Silicon Power Transistors |
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| 5 | TIP36 |
SavantIC |
SILICON POWER TRANSISTOR |
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| 6 | TIP36 |
Comset Semiconductors |
Silicon Power Transistors |
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| 7 | TIP36AB |
INCHANGE |
PNP Transistor |
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| 8 | TIP36AF |
CDIL |
POWER TRANSISTORS |
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| 9 | TIP36AF |
INCHANGE |
PNP Transistor |
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| 10 | TIP36AT |
INCHANGE |
PNP Transistor |
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Desde 2024. D4U Semiconductor.
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