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TIP36 Complementary Silicon Power Transistor

TIP36


TIP36
Part Number TIP36
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TIP36

Comset Semiconductors
TIP36
Part Number TIP36
Manufacturer Comset Semiconductors
Title Silicon Power Transistors
Description SEMICONDUCTORS PNP TIP36-A-B-C SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings TI.
Features rrent -5 A @ Tc < 25° PC Power Dissipation @ Ta < 25° 125 Watts 3.5 TJ Junction Temperature http://www.DataSheet4U.net/ 150 °C -65 to +150 Ts Storage Temperature range THERMAL CHARACTERISTICS Symbol Ratings TIP36 TIP36A TIP36B TIP36C TIP36 TIP36A TIP36B TIP36C Value Unit RthJ-MB From junction to mounting base 1 °C/W RthJ-A From junction to ambient in free air 35.7 °C/W 04/10/.


TIP36

INCHANGE
TIP36
Part Number TIP36
Manufacturer INCHANGE
Title PNP Transistor
Description ·DC Current Gain- : hFE= 25(Min)@IC = -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Complement to Type TIP35 ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= -1.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed.
Features red trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -15A ;IB= -1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -25A; IB= -5A VBE(on)-1 Base-Emitter On Voltage IC= -15A; VCE= -4V VB.


TIP36

Power Innovations Limited
TIP36
Part Number TIP36
Manufacturer Power Innovations Limited
Title PNP SILICON POWER TRANSISTORS
Description TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designed for Complementary Use with the TIP35 Series 125 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 25 A Continuous Collector Curren.
Features Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°.


TIP36

Central Semiconductor
TIP36
Part Number TIP36
Manufacturer Central Semiconductor
Title Complementary Silicon Power Transistors
Description The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. MARKING: FULL PART NUMBER TO-218 TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C) Collector-B.
Features EO VCE=60V (TIP35B, TIP35C, TIP36B, TIP36C) ICES VCE=Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP35, TIP36) 40 BVCEO IC=30mA (TIP35A, TIP36A) 60 BVCEO IC=30mA (TIP35B, TIP36B) 80 BVCEO IC=30mA (TIP35C, TIP36C) 100 VCE(SAT) IC=15A, IB=1.5A VCE(SAT) IC=25A, IB=5.0A VBE(ON) VCE=4.0V, IC=15A VBE(ON) VCE=4.0V, IC=25A hFE VCE=4.0V, IC=1.5A 25 hFE VCE=4.0V, IC=15A 10 hfe VCE=10.


TIP36

SavantIC
TIP36
Part Number TIP36
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description With TO-3PN package www.datasheet4u.com ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION TIP36/36A.
Features to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP36 Collector-emitter sustaining voltage TIP36A IC=-30mA ;IB=0 TIP36B TIP36C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Col.


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