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SiHB12N60E |
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| Part Number | SiHB12N60E |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com SiHB12N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 58 6 13 Single 0.38 D2PAK (TO-263) D G GD S S N-Channel MOSFET FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching an. |
| Features |
• Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING I. |
| Datasheet |
 SiHB12N60E Data Sheet
PDF 211.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SiHB12N65E |
Vishay |
Power MOSFET |
|
| 2 | SIHB12N50C |
Vishay Siliconix |
Power MOSFET |
|
| 3 | SiHB125N65E |
Vishay |
Power MOSFET |
|
| 4 | SiHB100N60E |
Vishay |
Power MOSFET |
|
| 5 | SiHB100N65E |
Vishay |
Power MOSFET |
|
| 6 | SiHB11N80E |
Vishay |
Power MOSFET |
|
| 7 | SIHB16N50C |
Vishay Siliconix |
Power MOSFET |
|
| 8 | SiHB17N80AE |
Vishay |
Power MOSFET |
|
| 9 | SiHB065N60E |
Vishay |
Power MOSFET |
|
| 10 | SiHB085N60EF |
Vishay |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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