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SiHB100N65E |
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| Part Number | SiHB100N65E |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com SiHB100N65E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) GD S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 62 16 15 Single 0.087 FEATURES • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective c. |
| Features |
• 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction power supplies (PFC) • Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery charg. |
| Datasheet |
 SiHB100N65E Data Sheet
PDF 186.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SiHB100N60E |
Vishay |
Power MOSFET |
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| 2 | SiHB11N80E |
Vishay |
Power MOSFET |
|
| 3 | SiHB125N65E |
Vishay |
Power MOSFET |
|
| 4 | SIHB12N50C |
Vishay Siliconix |
Power MOSFET |
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| 5 | SiHB12N60E |
Vishay |
Power MOSFET |
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| 6 | SiHB12N65E |
Vishay |
Power MOSFET |
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| 7 | SIHB16N50C |
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| 8 | SiHB17N80AE |
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| 9 | SiHB065N60E |
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| 10 | SiHB085N60EF |
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Desde 2024. D4U Semiconductor.
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