Busque con el número de pieza junto con el fabricante o la descripción
SIHB16N50C |
Click to view a larger image
| Part Number | SIHB16N50C |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 68 17.6 21.8 Single TO-220AB TO-220 FULLPAK 0.38 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Co. |
| Features |
• Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB SiHP16N50C-E3 Lead (Pb)-free - - D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Dra. |
| Datasheet |
 SIHB16N50C Data Sheet
PDF 292.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SiHB100N60E |
Vishay |
Power MOSFET |
|
| 2 | SiHB100N65E |
Vishay |
Power MOSFET |
|
| 3 | SiHB11N80E |
Vishay |
Power MOSFET |
|
| 4 | SiHB125N65E |
Vishay |
Power MOSFET |
|
| 5 | SIHB12N50C |
Vishay Siliconix |
Power MOSFET |
|
| 6 | SiHB12N60E |
Vishay |
Power MOSFET |
|
| 7 | SiHB12N65E |
Vishay |
Power MOSFET |
|
| 8 | SiHB17N80AE |
Vishay |
Power MOSFET |
|
| 9 | SiHB065N60E |
Vishay |
Power MOSFET |
|
| 10 | SiHB085N60EF |
Vishay |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
|