SSE80N06-C |
Part Number | SSE80N06-C |
Manufacturer | SeCoS |
Description | The SSE80N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSE80N06-C meet the RoHS and Green Product requirement with full function reliability approved. TO-220 FEATURES Advanced high cell density Trench technolog. |
Features | Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 80N06 =Date Code ORDER INFORMATION Part Number Type SSE80N06-C Lead (Pb)-free and Halogen-free REF. A B C D E F G Millimeter Min. Max. 9.70 10.60 14.22 16.5 2.54. 3.40 12.7 14.7 1.17 1.78 0.4 1.00 3.60 4.82 REF. H I J K L M Millimeter Min. Max. 2.54 TYP. 2.03 2.92 2.70 3.30 0.33 0.65 5.5 7 1.20 1.40 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous D. |
Datasheet |
SSE80N06-C Data Sheet
PDF 520.88KB |
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1 | SSE04N60SL |
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2 | SSE04N65SL |
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3 | SSE07N80SL |
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4 | SSE08N60SL |
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5 | SSE102N10SV-C |
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6 | SSE104N10-C |
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7 | SSE105P03-C |
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8 | SSE110N03-03P |
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9 | SSE12N65SL |
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10 | SSE133N12S-C |
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