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| Part Number | SI2302DS |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI2302DS |
| Manufacturer | NXP |
| Title | N-channel FET |
| Description | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications s Battery managemen. |
| Features | s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) 3 Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MSB003 MBB076 d s SOT2. |
| Part Number | SI2302DS |
| Manufacturer | Vishay |
| Title | N-Channel MOSFET |
| Description | Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.085 @ VGS = 4.5 V 20 0.115 @ VGS = 2.5 V ID (A) 2.8 2.4 TO-236 (SOT-23) G1 S2 3D Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb. |
| Features | Document Number: 70628 S-53600—Rev. D, 22-May-97 Limit 100 166 Unit _C/W www.vishay.com S FaxBack 408-970-5600 2-1 Si2302DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Fo. |
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