SI2302DS |
Part Number | SI2302DS |
Manufacturer | NXP (https://www.nxp.com/) |
Description | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2. Features s s s s TrenchMOS™ technology Very fast switc... |
Features |
s s s s TrenchMOS™ technology Very fast switching Logic level compatible Subminiature surface mount package.
3. Applications
s Battery management s High speed switch s Low power DC to DC converter.
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g)
3
Simplified outline
Symbol
source (s) drain (d)
g 1 Top view 2
MSB003 MBB076
d
s
SOT23
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors
SI2302DS
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Pto... |
Document |
SI2302DS Data Sheet
PDF 257.33KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | Si2302DDS |
Vishay |
N-Channel MOSFET | |
2 | SI2302DS |
Kexin |
N-Channel MOSFET | |
3 | SI2302DS |
Vishay |
N-Channel MOSFET | |
4 | SI2302DS-HF |
Kexin |
N-Channel MOSFET | |
5 | SI2302DS-T1-GE3 |
VBsemi |
N-Channel MOSFET | |
6 | SI2302 |
MCC |
N-channel MOSFET |