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| Part Number | SI2302 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | SI2302 |
| Manufacturer | MCC |
| Title | N-channel MOSFET |
| Description | Features • Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. |
| Features |
• Rugged and Reliable • Lead Free Product is Acquired • High Dense Cell Design for Extremely Low RDS(ON) • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SI2302 N-Channel Enhancement Mode Field Effect Transistor Maximum Ratings • Op. |
| Part Number | SI2302 |
| Manufacturer | VTR |
| Title | 20V N-Channel MOSFET |
| Description | 20V N-Cha SI2302 VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 3.6A 85m Ω 115mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.6. |
| Features | Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0e 10e Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Paramete. |
| Part Number | SI2302 |
| Manufacturer | YANGJING |
| Title | N-channel MOSFET |
| Description | SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A2SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwis. |
| Features | TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING: A2SHB SOT-23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source-Drain Current(Diode Conduction) Power Dissipation Thermal Resistance from Junction to Ambient (t≤5s) Operating Juncti. |
similar datasheet
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| 1 | SI2300 |
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| 2 | SI2300 |
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| 3 | SI2300 |
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| 4 | SI2300 |
HOTTECH |
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| 5 | SI2300 |
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| 6 | Si2300 |
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| 7 | SI2300 |
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| 8 | SI2300DS |
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| 9 | SI2301 |
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| 10 | SI2301 |
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Desde 2024. D4U Semiconductor.
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