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S1839 |
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| Part Number | S1839 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) S1839 DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS- FEATURES: . Complementary to S1838. . Driver Stage Application of 20 to 25 Watts Amplifiers. Unit in MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Cur. |
| Features |
. Complementary to S1838. . Driver Stage Application of 20 to 25 Watts Amplifiers.
Unit in
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL vCBO vCEO VEBO
ic
PC
^stg
I
RATING -80 -80 -5
-300 -100
625 150 -55-150
UNIT
1.2 7
LO
f * ^ 1.2 7 ^K:'V I 1. EMITTER 2. BASE 3. COLLECTOR JEDEC mA mA TOSHIBA 2— 5F1F mW Weight : 0.21g °C ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off C. |
| Datasheet |
 S1839 Data Sheet
PDF 78.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S1836 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | S1837 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | S1838 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 10 | S1805 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|