Busque con el número de pieza junto con el fabricante o la descripción
S1838 |
Click to view a larger image
| Part Number | S1838 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | . SILICON NPN EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONSVOLTAGE AMPLIFIER APPLICATIONS- FEAT [-RES': • Complementary to S1839. • Driver Stage Application of 20 to 25 Watts Amplifiers I nit in mm Storage I Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC CONDITION Emitter Cut-off Current Collector-Emitter Brra. |
| Features | V CE --2V 3 100 Q2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) SAFE OPERATING AREA 30 50 100 COLLECTOR CURRENT I c CmA) VcE(sat) ~ I C oX, OM o< 35 10 30 50 100 COLLECTOR CURRENT I c CmA) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1.5 1 35 10 COLLECTOR-EMITTER VOLTAGE 30 50 100 VCE Cv) 970- . |
| Datasheet |
 S1838 Data Sheet
PDF 79.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | S1836 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | S1837 |
Toshiba |
Silicon PNP Transistor |
|
| 3 | S1839 |
Toshiba |
Silicon PNP Transistor |
|
| 4 | S18 |
YS |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | S18-05N-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 6 | S18-05N-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 7 | S18-05P-1 |
HIGHLY |
PROXIMITY SWITCH |
|
| 8 | S18-05P-2 |
HIGHLY |
PROXIMITY SWITCH |
|
| 9 | S18-L232B-2 |
Senba Sensing |
Mini SMD Digital Pyroelectric Infrared Sensors |
|
| 10 | S1805 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|