Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | PTFC210202FC |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PTFC210202FC |
| Manufacturer | Wolfspeed |
| Title | Thermally-Enhanced High Power RF LDMOS FET |
| Description | The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 t MHz frequency band. Manufactured with Wolfspeed's advanced LDMOS c process, this device provides excellent thermal performance and superior reliability. d. |
| Features |
• Input matched • Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power • Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) • Low thermal resistance • Pb-free and RoHS compliant Peak/Average Ratio, Gain (dB) Efficiency (%) n 0 co 28 ptfc210202. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PTFC260202FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 2 | PTFC261402FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 3 | PTFC261402FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 4 | PTFC262157FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 5 | PTFC262808SV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
|
| 6 | PTFC270051M |
Infineon |
High Power RF LDMOS Field Effect Transistor |
|
| 7 | PTFC270101M |
Wolfspeed |
High Power RF LDMOS Field Effect Transistor |
|
| 8 | PTFC270101M |
Infineon |
High Power RF LDMOS Field Effect Transistor |
|
| 9 | PTFC101C1G0 |
TE |
Platinum Temperature Sensors |
|
| 10 | PTF |
Vishay |
Metal Film Resistors |
|
Desde 2024. D4U Semiconductor.
|