Part Number | PTFC270101M |
Distributor | Stock | Price | Buy |
---|
Part Number | PTFC270101M |
Manufacturer | Infineon |
Title | High Power RF LDMOS Field Effect Transistor |
Description | The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package. PTFC270101M Package PG-SON-10 Gain (dB) D. |
Features |
• Unmatched input and output • Typical CW performance, 2170 MHz, 28 V - Output power @ P1dB = 10 W - Gain = 20 dB - Efficiency = 60% • Typical two-carrier WCDMA performance, 2170 MHz, 28 V, 8 dB PAR - Output power = 1.3 W avg - Gain = 21 dB - Efficiency = 21% - ACPR = –44.9 dBc @ 5 . |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFC270051M |
Infineon |
High Power RF LDMOS Field Effect Transistor | |
2 | PTFC210202FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTFC210202FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTFC260202FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTFC261402FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTFC261402FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
7 | PTFC262157FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
8 | PTFC262808SV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
9 | PTFC101C1G0 |
TE |
Platinum Temperature Sensors | |
10 | PTF |
Vishay |
Metal Film Resistors |