PTFC210202FC |
Part Number | PTFC210202FC |
Manufacturer | Wolfspeed |
Description | The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 t MHz frequency band. Manufactured with Wolfspeed's advan... |
Features |
• Input matched • Typical CW performance, 2170 MHz, 28 V, combined outputs - Output power at P1dB = 28 W - Efficiency = 62% - Gain = 20.9 dB • Capable of handling 10:1 VSWR @28 V, 28 W (CW) output power • Integrated ESD protection : Human Body Model, Class 1C (per JESD22-A114) • Low thermal resistance • Pb-free and RoHS compliant Peak/Average Ratio, Gain (dB) Efficiency (%) n 0 co 28 ptfc210202fc_g1 -60 32 36 40 44 Average Output Power (dBm) dis RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture) VDD = 28 V, IDQ = 170 mA, POUT = 5 W avg, ƒ1 = 2... |
Document |
PTFC210202FC Data Sheet
PDF 1.10MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | PTFC210202FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
2 | PTFC260202FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
3 | PTFC261402FC |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
4 | PTFC261402FC |
Wolfspeed |
Thermally-Enhanced High Power RF LDMOS FET | |
5 | PTFC262157FH |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET | |
6 | PTFC262808SV |
Infineon |
Thermally-Enhanced High Power RF LDMOS FET |