| Part Number | NDT452P |
| Manufacturer | Fairchild |
| Title | MOSFET Transistor, P-Channel, SOT-223 |
| Description | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are part... |
| Features |
-3A, -30V. RDS(ON) = 0.18Ω @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation
T A = 25°C unless otherwise noted
NDT452P -30 ±20
(Note 1a)
Units V V A
±3 ±20
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to... |
| Document |
 NDT452P datasheet pdf (227.55KB)
|
| Distributor |
Quest Components All other distributors |
| Stock | 20 In Stock |
| Price | No price available |
| BuyNow |
 Buy Now (Manufacturer a onsemi NDT452P) |
| Part Number | NDT452AP |
| Manufacturer | Fairchild |
| Title | P-Channel MOSFET |
| Description | Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. |
| Features |
-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V RDS(ON) = 0.1Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
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| Document | NDT452AP datasheet pdf |
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