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NCE2025S |
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| Part Number | NCE2025S |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ●VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Schematic diagram. |
| Features |
●VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Schematic diagram Application ● DC/DC Converter ● Battery protection Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE2025S NCE2025S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuou. |
| Datasheet |
 NCE2025S Data Sheet
PDF 395.27KB |
| Distributor | Stock | Price | Buy |
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NCE2025S |
| Part Number | NCE2025S |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | NCE2025S-VB NCE2025S-VB Datasheet N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0049 at VGS = 4.5 V 20 0.0056 at VGS = 2.5 V ID (A)a 20e 20e Qg (Typ.) 27.5 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D FEATURES • Halogen-free According to IEC 61249-2-21 Defi. |
| Features |
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low-Side MOSFET for Synchronous Buck - Game Machine - PC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE2025I |
VBsemi |
N-Channel MOSFET |
|
| 2 | NCE2025I |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE2003 |
NCE Power Semiconductor |
N & P-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE2004NE |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE2006NE |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE2007N |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | NCE2008E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 8 | NCE2010E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 9 | NCE2011E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 10 | NCE2012 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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