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NCE2010E |
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| Part Number | NCE2010E |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Features ● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power an. |
| Features |
● VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ●PWM application ●Load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 2010E NCE2010E TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain . |
| Datasheet |
 NCE2010E Data Sheet
PDF 351.76KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE2011E |
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| 3 | NCE2014ES |
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| 4 | NCE2003 |
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| 6 | NCE2006NE |
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| 8 | NCE2008E |
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| 9 | NCE2025I |
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| 10 | NCE2025I |
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Desde 2024. D4U Semiconductor.
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