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NCE2025I |
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| Part Number | NCE2025I |
| Manufacturer | NCE Power Semiconductor |
| Description | The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniform. |
| Features |
● VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Load switching ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width . |
| Datasheet |
 NCE2025I Data Sheet
PDF 339.33KB |
| Distributor | Stock | Price | Buy |
|---|
NCE2025I |
| Part Number | NCE2025I |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | NCE2025I-VB NCE2025I-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) （mΩ） 7 at VGS = 10 V 30 9 at VGS= 4.5 V ID (A) 50 45 Qg (Typ.) 19 nC TO-251 D FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICAT. |
| Features |
• Halogen-free • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC Conversion - System Power RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NCE2025S |
VBsemi |
N-Channel MOSFET |
|
| 2 | NCE2025S |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 3 | NCE2003 |
NCE Power Semiconductor |
N & P-Channel Enhancement Mode Power MOSFET |
|
| 4 | NCE2004NE |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 5 | NCE2006NE |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 6 | NCE2007N |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET |
|
| 7 | NCE2008E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 8 | NCE2010E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 9 | NCE2011E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
| 10 | NCE2012 |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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