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| Part Number | MTP10N10E |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTP10N10E |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTP10N10E Preferred Device Power MOSFET 10 Amps, 100 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for low voltage, high speed swi. |
| Features | idge Circuits MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage Drain Current − Continuous Drain Current − Pulsed Total Power Dissipation Derate above 25°C VDSS 100 VDGR 100 VGS ± 20 ID 10 IDM 25 PD 75 0.6 Operating and Storage Temperature Range TJ, Tstg −65 to 150 Thermal Resistanc. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP10N10 |
Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs |
|
| 2 | MTP10N10 |
Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor |
|
| 3 | MTP10N10EL |
Motorola |
TMOS POWER FET |
|
| 4 | MTP10N10EL |
ON Semiconductor |
Power MOSFET |
|
| 5 | MTP10N10M |
Motorola Semiconductor |
Power Field Effect Transistor |
|
| 6 | MTP10N15 |
Motorola |
POWER FIELD EFFECT TRANSISTOR |
|
| 7 | MTP10N05 |
Motorola |
(MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
|
| 8 | MTP10N06 |
Motorola |
(MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
|
| 9 | MTP10N08 |
Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs |
|
| 10 | MTP10N08 |
Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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