MTP10N10E |
Part Number | MTP10N10E |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | Power MOSFET |
Features |
idge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage
Drain Current − Continuous Drain Current − Pulsed
Total Power Dissipation Derate above 25°C
VDSS
100
VDGR
100
VGS
± 20
ID
10
ID... |
Document |
MTP10N10E Data Sheet
PDF 221.41KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MTP10N10 |
Fairchild Semiconductor |
(MTP10N08 / MTP10N10) N-Channel Power MOSFETs | |
2 | MTP10N10 |
Motorola Semiconductor |
(MTP10N08 / MTP10N10) Power Field Effect Transistor | |
3 | MTP10N10E |
Motorola |
TMOS POWER FETs | |
4 | MTP10N10EL |
Motorola |
TMOS POWER FET | |
5 | MTP10N10EL |
ON Semiconductor |
Power MOSFET | |
6 | MTP10N10M |
Motorola Semiconductor |
Power Field Effect Transistor |