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| Part Number | MTP10N10EL |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTP10N10EL |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, hi. |
| Features |
• Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Pb−Free Package is Available MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 MW) Gate−to−Sou. |
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Desde 2024. D4U Semiconductor.
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