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| Part Number | MTD3055V |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTD3055V |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The r. |
| Features | 12 A, 60 V. RDS(ON) = 0.15 Ω @ VGS = 10 V Low gate charge. Fast switching speed. High performance technology for low RDS(ON). ' ' * 6 72 $ EVROXWH 0D[LP XP 5DWLQJV & R ÃÃÃÃÃÃÃU 2!$ 8ÃyrÃur vrÃrq 6PERO W'66 W*66 D' Q' U-ÃU67* 3DUDPHWHU 9 h v T pr ÃW yh t r B h r T pr ÃW yh t r H hvÃ9 hvÃ8 rÃÃÃÃ8vÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃIrà & R ÃÃÃÃÃÃÃ. |
| Part Number | MTD3055V |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices ar. |
| Features |
nd Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω ) Thermal Resistance – Junction to Case – Junction to Ambient – Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM . |
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