MTD3055V |
Part Number | MTD3055V |
Manufacturer | Motorola |
Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055V/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–r... |
Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET • Surface Mount Package Available in 16 mm 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage – Continu... |
Document |
MTD3055V Data Sheet
PDF 206.04KB |
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