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| Part Number | MTD3055VL |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTD3055VL |
| Manufacturer | Motorola |
| Title | TMOS POWER FET |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055VL/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubl. |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET • Surface Mount Package Available in 16 mm 13. |
| Part Number | MTD3055VL |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel MOSFET |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Features 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V Critical DC electrical parameters specified at elevated temperature. Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. Rugged internal source-. |
| Features | 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V Critical DC electrical parameters specified at elevated temperature. Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. This N-Channel Logic Level MOSFET has been. |
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