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| Part Number | MTD2N40E |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MTD2N40E |
| Manufacturer | ON Semiconductor |
| Title | Power MOSFET |
| Description | MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage MOSFET is designed to withstand high . |
| Features |
perature • Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 400 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 400 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous @ TC = 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) ID ID IDM 2.0 . |
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Desde 2024. D4U Semiconductor.
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