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MTD2N40E |
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| Part Number | MTD2N40E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET DPAK for Surface Mount Designer's MTD2N40E Motorola Preferred Device N–Chan... |
| Features |
Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number • Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size Operating and S... |
| Document |
 MTD2N40E Data Sheet
PDF 268.14KB |
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Desde 2024. D4U Semiconductor.
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