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MTD2N40E |
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| Part Number | MTD2N40E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTD2N40E Preferred Device Power MOSFET 2 Amps, 400 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading... |
| Features |
perature • Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Drain−Source Voltage VDSS 400 Drain−Gate Voltage (RGS = 1.0 MΩ) VDGR 400 Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 40 Drain Current − Continuous @ TC = 25°C Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 μs) ID ID IDM 2.0 1.5 6.0 Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size PD 40 0.32 1.75 Operating and Storage Temperature Ran... |
| Document |
 MTD2N40E Data Sheet
PDF 256.34KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | MTD2N40E |
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TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
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| 2 | MTD2N50E |
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TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
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| 6 | MTD2003 |
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Desde 2024. D4U Semiconductor.
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