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| Part Number | MPSW56 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MPSW56 |
| Manufacturer | WEJ |
| Title | PNP Transistor |
| Description | RoHS MPSW56 MPSW56 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 1 W (Tamb=25℃) .,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ICELECTRICAL. |
| Features | Power dissipation TPCM: 1 W (Tamb=25℃) .,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-bas. |
| Part Number | MPSW56 |
| Manufacturer | Motorola |
| Title | One Watt Amplifier Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW55/D One Watt Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW55 MPSW56* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Cu. |
| Features |
IC = –1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –40 Vdc, IB = 0) (VCE = –60 Vdc, IB = 0) Collector Cutoff Current (VCB = –40 Vdc, IE = 0) (VCB = –60 Vdc, IE = 0) Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO — — — –0.1 –0.1 –0.1 µAdc V(BR)CEO MPSW55 MPSW56 V(BR)EBO I. |
| Part Number | MPSW56 |
| Manufacturer | Fairchild |
| Title | PNP General Purpose Amplifier |
| Description | TO-18 OPTION STD TO-5 OPTION STD TO-226 STANDARD STRAIGHT LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 1.0 K / BOX 1.0 K / BOX 1.5 K / BOX 1,500 un its per EO70 box for std o ption 114mm x 102mm x 51mm EO70 Immediate Box 5 EO70 boxes per Int ermediate Box 530mm x 130mm x 83m. |
| Features | Junction to Case Thermal Resistance, Junction to Ambient 2 Max MPSW56 1.0 8.0 50 125 Units W mW/°C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . 2000 Fairchild Semiconductor Corporation MPSW56, Rev A MPSW56 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted. |
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