MPSW56 |
Part Number | MPSW56 |
Manufacturer | WEJ |
Description | RoHS MPSW56 MPSW56 TRANSISTOR (PNP) DFEATURES Power dissipation TPCM: 1 W (Tamb=25℃) .,LCollector current ICM: -500 Collector-base voltage mA OV(BR)CBO: -80 V Operating and storage junction te... |
Features |
Power dissipation
TPCM:
1 W (Tamb=25℃)
.,LCollector current
ICM: -500 Collector-base voltage
mA
OV(BR)CBO: -80 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
TO-92
1. EMITTER 2. BASE 3. COLLECTOR
123
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency WEJCollector output capacitan... |
Document |
MPSW56 Data Sheet
PDF 133.00KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MPSW51 |
Motorola |
One Watt High Current Transistors | |
2 | MPSW51 |
ON Semiconductor |
One Watt High Current Transistors | |
3 | MPSW51 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor | |
4 | MPSW51 |
MCC |
PNP Plastic-Encapsulate Transistors | |
5 | MPSW51A |
ON Semiconductor |
One Watt High Current Transistors | |
6 | MPSW51A |
Motorola |
One Watt High Current Transistors |