Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | MPSW01 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MPSW01 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN General Purpose Amplifier |
| Description | MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage . |
| Features |
• This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 30 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 40 5.0 IC Collector Current - Continuous 1.0 PD Total Device Dissipation Derate about 25°C 1.0 8.0 TJ , TSTG Operatin. |
| Part Number | MPSW01 |
| Manufacturer | Motorola |
| Title | One Watt High Current Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW01/D One Watt High Current Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSW01 MPSW01A* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage MPSW01 MPSW01A Collector – Base Voltage MPSW01 MPSW01A E. |
| Features |
reakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW01 MPSW01A IEBO V(BR)CEO MPSW01 MPSW01A V(BR)CBO MPSW01 MPSW01A V(BR)EBO ICBO — — — 0.1 0.1 . |
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| 1 | MPSW01A |
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| 2 | MPSW01A |
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| 3 | MPSW05 |
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| 4 | MPSW05 |
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| 5 | MPSW06 |
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| 6 | MPSW06 |
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| 7 | MPSW06 |
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| 8 | MPSW10 |
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| 9 | MPSW13 |
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| 10 | MPSW13 |
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Desde 2024. D4U Semiconductor.
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