Part Number | MPSH11 |
Distributor | Stock | Price | Buy |
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Part Number | MPSH11 |
Manufacturer | Motorola |
Title | (MPSH10 / MPSH11) VHF/UHF Transistors |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors Order this document by MPSH10/D NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH10 MPSH11 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Total Device Dissipation. |
Features |
0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small –Signal Transistors, FETs and Diodes Device Data © M. |
Part Number | MPSH11 |
Manufacturer | Fairchild Semiconductor |
Title | NPN RF Transistor |
Description | MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drif. |
Features | ns involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH11 350 2.8 125 357 Max *MMBTH11 225 1.8 556 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fa. |
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1 | MPSH10 |
Central Semiconductor |
NPN RF TRANSISTORS | |
2 | MPSH10 |
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NPN 1 GHz general purpose switching transistor | |
3 | MPSH10 |
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(MPSH10 / MPSH11) VHF/UHF Transistors | |
4 | MPSH10 |
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5 | MPSH10 |
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7 | MPSH10 |
UTC |
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8 | MPSH10 |
NTE |
Silicon NPN Transistor | |
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UTC |
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