MPSH11 Datasheet. existencias, precio

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MPSH11 NPN RF TRANSISTORS


MPSH11
Part Number MPSH11
Distributor Stock Price Buy
Motorola
MPSH11
Part Number MPSH11
Manufacturer Motorola
Title (MPSH10 / MPSH11) VHF/UHF Transistors
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors Order this document by MPSH10/D NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH10 MPSH11 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Total Device Dissipation.
Features 0) Emitter
  – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small
  –Signal Transistors, FETs and Diodes Device Data © M.
Fairchild Semiconductor
MPSH11
Part Number MPSH11
Manufacturer Fairchild Semiconductor
Title NPN RF Transistor
Description MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drif.
Features ns involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH11 350 2.8 125 357 Max *MMBTH11 225 1.8 556 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fa.

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