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| Part Number | MPSH10 |
| Distributor | Stock | Price | Buy |
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| Part Number | MPSH10 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN RF Transistor |
| Description | MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, . |
| Features | ycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH10 350 2.8 125 357 Max *MMBTH10 225 1.8 556 Units mW mW/ °C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©1997 Fairchild Semiconductor Corporation. |
| Part Number | MPSH10 |
| Manufacturer | ON Semiconductor |
| Title | NPN Transistor |
| Description | MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate a. |
| Features |
• Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 −55 to +150 Unit Vdc Vdc Vdc W mW/°C W. |
| Part Number | MPSH10 |
| Manufacturer | NXP |
| Title | NPN 1 GHz general purpose switching transistor |
| Description | Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81. PINNING PIN 1 2 3 DESCRIPTION collector emitter base page MPSH10 1 2 3 MSB033 Marking code: PSH10. Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot Tj hFE Cre Crb fT rbCc Note 1. Ts is. |
| Features |
• Low cost • High power gain. DESCRIPTION Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81. PINNING PIN 1 2 3 DESCRIPTION collector emitter base page MPSH10 1 2 3 MSB033 Marking code: PSH10. Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot Tj hFE Cre Crb fT rbCc Note 1. Ts is the temperature at the soldering point of the collector l. |
| Part Number | MPSH10 |
| Manufacturer | CDIL |
| Title | NPN Silicon Planar Epitaxial Transistor |
| Description | SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Junction to case VCBO VEBO. |
| Features | ent DC Current Gain Collector Emitter Saturation Voltage Base Emitter On Voltage DYNAMIC CHARACTERISTICS DESCRIPTION Transition Frequency Collector Base Capacitance Common Base feedback Capacitance Collector Base Time Constant VCBO VEBO ICBO IEBO hFE VCE(sat) VBE(on) IC=100µA, IE=0 IE=10µA, IC=0 VCB=25V, IE = 0 VEB=2V, IC = 0 IC=4mA,VCE=10V IC=4mA, IB=0.4mA IC=4mA,VCE=10V MIN 25 30 3.0 MAX UNIT. |
| Part Number | MPSH10 |
| Manufacturer | UTC |
| Title | RF TRANSISTOR |
| Description | The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10L-x-T92-K MPSH10G-x-T92-K Note: Pin Assignment: E: Emitter C: Collector B. |
| Features | ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Base Break. |
| Part Number | MPSH10 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | MPSH10 Silicon NPN Transistor VHF Oscillator, Mixer, IF Amp TO−92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO . . . . . . . . . .. |
| Features | . |
| Part Number | MPSH10 |
| Manufacturer | Central Semiconductor |
| Title | NPN RF TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR MPSH10 and MPSH11 are silicon NPN RF transistors manufactured by the epitaxial planar process and designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitte. |
| Features | . |
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|---|---|---|---|---|
| 1 | MPSH10A |
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| 2 | MPSH10P |
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| 3 | MPSH11 |
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| 5 | MPSH11 |
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| 6 | MPSH17 |
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| 7 | MPSH17 |
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| 8 | MPSH17 |
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| 9 | MPSH17 |
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| 10 | MPSH04 |
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