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MPSH10 |
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| Part Number | MPSH10 |
| Manufacturer | Fairchild Semiconductor |
| Description | MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with c... |
| Features |
ycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH10 350 2.8 125 357
Max
*MMBTH10 225 1.8 556
Units
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©1997 Fairchild Semiconductor Corporation
MPSH10 / MMBTH10
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CB... |
| Document |
 MPSH10 Data Sheet
PDF 71.50KB |
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