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MPSH11 |
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| Part Number | MPSH11 |
| Manufacturer | Fairchild Semiconductor |
| Description | MPSH11 / MMBTH11 Discrete POWER & Signal Technologies MPSH11 MMBTH11 C E C BE TO-92 SOT-23 Mark: 3G B NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer ... |
| Features |
ns involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH11 350 2.8 125 357
Max
*MMBTH11 225 1.8 556
Units
mW mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
©1997 Fairchild Semiconductor Corporation
MPSH11 / MMBTH11
NPN RF Transistor
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF... |
| Document |
 MPSH11 Data Sheet
PDF 182.21KB |
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