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| Part Number | MMBT5551LT1 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | MMBT5551LT1 |
| Manufacturer | Motorola |
| Title | High Voltage Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Cu. |
| Features |
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. |
| Part Number | MMBT5551LT1 |
| Manufacturer | WEJ |
| Title | TRANSISTOR |
| Description | RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller Voltage:VCEO=160V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 O Unit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-B. |
| Features | oltage BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) 180 160 6 80 80 30 50 50 250 0.5 0.15 1 1 V IC=100 A IE=0 V IC=1mA IB=0 V IE=10 A IC=0 nA VCB=120V, VC=0 nA VCB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, IC=50mA V IC=50mA, IB=5mA V IC=10mA, IB=1mA V IC=50mA, IB=1mA V IC=10mA, IB=1mA Current Gain-Bandwidth Product fT 100 300 MHz VCE=10V, IC=10mA,f=100. |
| Part Number | MMBT5551LT1 |
| Manufacturer | TGS |
| Title | NPN Transistor |
| Description | The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature-55+150°C Junction Temperature.. |
| Features | ..........................................6 V IC Collector Current ........................................................................ .................................600mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 180 160 6 80 80 30 100 - Typ. - Max. 50 50 0.15 0.2 1 1 250 300 6 Unit V V V nA nA V V . |
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